philips semiconductors product specification triacs bt131 series logic level general description quick reference data passivated, sensitive gate triacs in a symbol parameter max. max. unit plastic envelope, intended for use in general purpose bidirectional bt131- 500 600 switching and phase control v drm repetitive peak off-state voltages 500 600 v applications. these devices are i t(rms) rms on-state current 1 1 a intended to be interfaced directly to i tsm non-repetitive peak on-state current 16 16 a microcontrollers, logic integrated circuits and other low power gate trigger circuits. pinning - to92 pin configuration symbol pin description 1 main terminal 2 2 gate 3 main terminal 1 limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500 -600 v drm repetitive peak off-state - 500 1 600 1 v voltages i t(rms) rms on-state current full sine wave; t lead 51 ?c - 1 a i tsm non-repetitive peak full sine wave; t j = 25 ?c prior to on-state current surge t = 20 ms - 16 a t = 16.7 ms - 17.6 a i 2 ti 2 t for fusing t = 10 ms - 1.28 a 2 s di t /dt repetitive rate of rise of i tm = 1.5 a; i g = 0.2 a; on-state current after di g /dt = 0.2 a/ s triggering t2+ g+ - 50 a/ s t2+ g- - 50 a/ s t2- g- - 50 a/ s t2- g+ - 10 a/ s i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 321 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 3 a/ s. may 2000 1 rev 1.100
philips semiconductors product specification triacs bt131 series logic level thermal resistances symbol parameter conditions min. typ. max. unit r th j-lead thermal resistance full cycle - - 60 k/w junction to lead half cycle - - 80 k/w r th j-a thermal resistance pcb mounted;lead length = 4mm - 150 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ - 0.4 3 ma t2+ g- - 1.3 3 ma t2- g- - 1.4 3 ma t2- g+ - 3.8 7 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 1.2 5 ma t2+ g- - 4.0 8 ma t2- g- - 1.0 5 ma t2- g+ - 2.5 8 ma i h holding current v d = 12 v; i gt = 0.1 a - 1.3 5 ma v t on-state voltage i t = 2.0 a - 1.2 1.5 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; t j = 125 ?c 0.2 0.3 - v i d off-state leakage current v d = v drm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; 5 15 - v/ s off-state voltage exponential waveform; r gk = 1 k ? t gt gate controlled turn-on i tm = 1.5 a; v d = v drm(max) ; i g = 0.1 a; - 2 - s time di g /dt = 5 a/ s may 2000 2 rev 1.100
philips semiconductors product specification triacs bt131 series logic level fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus lead temperature t lead . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t lead 51?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 = 180 120 90 60 30 it(rms) / a ptot / w tsp(max) / c 125 122 119 116 113 110 107 104 1 -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1 1.2 tsp / c it(rms) / a 108 c 10us 100us 1ms 10ms 100ms 10 100 1000 bt132d t / s itsm / a t i tsm time i tj initial = 25 c max t t2- g+ quadrant di /dt limit t 0.01 0.1 1 10 0 0.5 1 1.5 2.0 2.5 3 surge duration / s it(rms) / a 1 10 100 1000 0 2 4 6 8 10 12 number of cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 tj / c vgt(tj) vgt(25 c) may 2000 3 rev 1.100
philips semiconductors product specification triacs bt131 series logic level fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-lead , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c t2+ g+ t2+ g- t2- g- t2- g+ igt(tj) igt(25 c) 0 0.5 1 1.5 2 0 0.5 1 1.5 2 vt / v it / a tj = 125 c typ max tj = 25 c vo = 1.0 v rs = 0.21 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 1 10 zth j-sp (k/w) 100 t p p t d unidirectional bidirectional -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c ih(tj) ih(25c) 0 50 100 150 1 10 100 1000 tj / c dvd/dt (v/us) may 2000 4 rev 1.100
philips semiconductors product specification triacs bt131 series logic level mechanical data fig.13. to92 ; plastic envelope; net mass: 0.2 g notes 1. epoxy meets ul94 v0 at 1/8". unit a references outline version european projection issue date iec jedec eiaj mm 5.2 5.0 b 0.48 0.40 c 0.45 0.40 d 4.8 4.4 d 1.7 1.4 e 4.2 3.6 l 14.5 12.7 e 2.54 e 1 1.27 l 1 (1) 2.5 b 1 0.66 0.56 dimensions (mm are the original dimensions) note 1. terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. sot54 to-92 sc-43 97-02-28 a l 0 2.5 5 mm scale b c d b 1 l 1 d e plastic single-ended leaded (through hole) package; 3 leads sot54 e 1 e 1 2 3 may 2000 5 rev 1.100
philips semiconductors product specification triacs bt131 series logic level definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. ? philips electronics n.v. 2000 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. may 2000 6 rev 1.100
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